000			01608cam a2200349 a 4500
003			EG-NbEJU
005			20240516114030.0
008			240423t2010 nyua grb 001 0 eng
010			_a2010022678
015			_aGBB011406 _2bnb
016	7		_a015478365 _2Uk
020			_a9780071635196 (alk. paper)
020			_a007163519X (alk. paper)
035			_a(OCoLC)ocn426811674
040			_aEG-NbEJU _cEG-NbEJU _dEG-NbEJU _beng
041			_aeng
050	0	0	_aTK7871.99.M44 _bK84 2010
100	1		_aKundu , Sandip
245	1	0	_aNanoscale CMOS VLSI circuits : _bdesign for manufacturability / _c[by] : Sandip Kundu , Aswin Sreedhar
246	1	4	_aNanoscale complementary metal oxide semiconductor very large-scale integration circuits
260			_aNew York : _bMcGraw-Hill , _c©2010
300			_axv , 296 pages : _billustrations ; _c24 cm.
504			_aIncludes bibliographical references and index
505	0		_aSemiconductor manufacturing -- Process and device variability : analysis and modeling -- Manufacturing-aware physical design closure -- Metrology, manufacturing defects, and defect extraction -- Defect impact modeling and yield improvement techniques -- Physical design and reliability -- Design for manufacturability : tools and methodologies.
650		0	_aMetal oxide semiconductors, Complementary _xDesign and construction _2LCSH
650		0	_aIntegrated circuits _xVery large scale integration _xDesign and construction _2LCSH
650		0	_aNanoelectronics _2LCSH
700	1		_aSreedhar , Aswin , _eco-author
901			_asara sorur
902			_aENG_03_(1161)
942			_2lcc _cBK
999			_c3424 _d3424