000			01682cam a22003017i 4500
003			EG-NbEJU
005			20240602064742.0
008			100407t2010 si a grb 001 0 eng
010			_a2010287231
020			_a9789814241939 (hbk.)
020			_a9814241938 (hbk.)
040			_aEG-NbEJU _beng _cEG-NbEJU _dEG-NbEJU
041			_aeng
050	0	0	_aTK7871.99.M44 _bM247
100	1		_aHoekstra , Jaap , _eauthor
245	1	0	_aIntroduction to nanoelectronic single-electron circuit design / _c[by] : Jaap Hoekstra , Delft University of Technology , The Netherlands
246	3		_aNanoelectric single-eletron circuit design
260			_aSingapore : _bPan Stanford Publishing , _c©2010
300			_axv , 301 pages : _billustrations ; _c24 cm.
500			_aMinimal Level Cataloging Plus
504			_aIncludes bibliographical references (pages 289-292) and index
505	2		_aIntroduction -- Tunneling experiments in nanoelectronics -- Current in electrodynamics and circuit theory -- Free electrons in quantum mechanics -- Current and tunnel current in quantum physics -- Energy in circuit theory -- Energy in the switched two-capacitor circuit -- Impulse circuit model for single-electron tunneling--zero tunneling time -- Impulse circuit models for single-electron tunneling--nonzero tunneling times -- Generalizing the theory to multi-junction circuits -- Single electron tunneling circuit examples -- Circuit design methodologies -- More potential applications and challenges.
650		0	_aNanoelectronics _2LCSH
650		0	_aIntegrated circuits _xDesign and construction _2LCSH
901			_asara sorur
902			_aENG_03_(1340) _aENG_03_(1128)
942			_2lcc _cBK
999			_c3827 _d3827