| 000 | 00855cam a22002774a 4500 | ||
|---|---|---|---|
| 003 | EG-NbEJU | ||
| 005 | 20240602063510.0 | ||
| 008 | 240602s2012 nyua gr 001 0 eng d | ||
| 010 | _a 2010045765 | ||
| 020 | _a9780071089029 | ||
| 035 | _a(OCoLC)ocn681739179 | ||
| 040 |
_aEG-NbEJU _cEG-NbEJU _dEG-NbEJU _beng |
||
| 041 | _aeng | ||
| 042 | _apcc | ||
| 050 | 0 | 0 |
_aQC611 _b.N39 2012 |
| 100 | 1 | _aNeamen , Donald A. | |
| 245 | 1 | 0 |
_aSemiconductor physics and devices : _bbasic principles / _c[by] : Donald A. Neamen , University of New Mexico |
| 250 | _afourth edition | ||
| 260 |
_aNew York : _bMcGraw-Hill , _c2012 |
||
| 300 |
_axxiv , 758 pages : _billustrations ; _c24 cm. |
||
| 504 | _aIncludes bibliographical references and index | ||
| 650 | 0 |
_aSemiconductors _2LCSH |
|
| 901 | _asara sorur | ||
| 902 | _aENG_03_(1123) | ||
| 942 |
_2lcc _n0 _cBK |
||
| 999 |
_c4336 _d4336 |
||